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| Item number: 2794E-2282966 Manufacturer no.: SQS660CENW-T1_GE3 EAN/GTIN: n/a |
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| Channel Type = N Maximum Continuous Drain Current = 18 A Maximum Drain Source Voltage = 60 V Series = TrenchFET Mounting Type = Surface Mount Pin Count = 8 Maximum Drain Source Resistance = 0.0112 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.5V Number of Elements per Chip = 2 More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 18 A | Maximum Drain Source Voltage: | 60 V | Package Type: | PowerPAK 1212-8W | Series: | TrenchFET | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 0.0112 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.5V | Number of Elements per Chip: | 2 | Transistor Material: | Si |
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| Other search terms: 2282966, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SQS660CENWT1_GE3 |
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