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| Item number:
2794E-2283058 Manufacturer no.:
STPSC20H12G2-TR EAN/GTIN:
n/a |
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| The STMicroelectronics 20 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.No or negligible reverse recovery Switching behaviour independent of temperature Robust high voltage periphery Operating Tj from -40 °C to 175 °C More information: | | Mounting Type: | Surface Mount | Package Type: | D2PAK | Maximum Continuous Forward Current: | 20A | Peak Reverse Repetitive Voltage: | 1200V | Diode Configuration: | Single | Pin Count: | 3 | Number of Elements per Chip: | 1 |
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