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2794E-2286510 Manufacturer no.:
AIKW50N65RF5XKSA1 EAN/GTIN:
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| The Infineon AIKW50N65RF5 is hybrid power discrete with SiC power technology with best cost-performance is the most important aspect for auxiliary applications in electric vehicles and hybrid vehicles. The hybrid of 650V TRENCHSTOP 5 AUTO fast switching IGBT and CoolSiC Schottky diode to enable a cost efficient performance boost for fast switching automotive applications such as on board charger, PFC, DC-DC and DC-AC.Trenchstop 5 fast switching IGBT Best in class efficiency in hard switching and resonant topologies Low gate charge QG Maximum junction temperature 175°C More information: | | Maximum Continuous Collector Current: | 80 A | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | ±20.0V | Maximum Power Dissipation: | 250 W | Package Type: | PG-TO247-3 | Pin Count: | 3 | Transistor Configuration: | Single |
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| Other search terms: power transistor, 2286510, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, AIKW50N65RF5XKSA1 |
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