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Silicon N-Channel MOSFET, 47 A, 650 V, 3-Pin TO-247 Infineon IMW65R027M1HXKSA1 / 2320382


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Product information
Product Image
Product Image
Item number:
     2794E-2320382
Manufacturer:
     Infineon
Manufacturer no.:
     IMW65R027M1HXKSA1
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Channel Type = N
Maximum Continuous Drain Current = 47 A
Maximum Drain Source Voltage = 650 V
Series = CoolSiC
Mounting Type = Through Hole
Pin Count = 3
Maximum Drain Source Resistance = 0.034 Ω
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 5.7V
Number of Elements per Chip = 1
More information:
Channel Type:
N
Maximum Continuous Drain Current:
47 A
Maximum Drain Source Voltage:
650 V
Package Type:
TO-247
Series:
CoolSiC
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
0.034 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
5.7V
Number of Elements per Chip:
1
Transistor Material:
Silicon
Other search terms: Transistors, power transistor, 2320382, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IMW65R027M1HXKSA1
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2794 East Midlands NN17
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Stock level: 2794 East Midlands NN17
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Rights to return this item: 2794 East Midlands NN17
Period of time:On the first day
Condition of packaging:Original packaging opened, but not damaged
Condition of goods:Unused
Return costs:Paid by supplier
Processing fee:Costs to be determined by the trading partner based on a case-by-case review.
The Terms and Conditions state that the warranty period continues regardless of the return rights stated.
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