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ROHM RGW80TS65DHRC11 Single IGBT, 40 A 650 V, 3-Pin TO-247N, Through Hole / 2352760


Quantity:  pieces  
Product information
Product Image
Product Image
Item number:
     2794E-2352760
Manufacturer:
     ROHM Semiconductor
Manufacturer no.:
     RGW80TS65DHRC11
EAN/GTIN:
     n/a
Search terms:
IGBT
Power transistor
Transistor
Transistors
Maximum Continuous Collector Current = 40 A
Maximum Collector Emitter Voltage = 650 V
Maximum Gate Emitter Voltage = ±30V
Maximum Power Dissipation = 214 W
Package Type = TO-247N
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Transistor Configuration = Common Emitter
More information:
Maximum Continuous Collector Current:
40 A
Maximum Collector Emitter Voltage:
650 V
Maximum Gate Emitter Voltage:
±30V
Maximum Power Dissipation:
214 W
Number of Transistors:
1
Configuration:
Single
Package Type:
TO-247N
Mounting Type:
Through Hole
Channel Type:
N
Pin Count:
3
Transistor Configuration:
Common Emitter
Other search terms: power transistor, 2352760, Semiconductors, Discrete Semiconductors, IGBTs, ROHM, RGW80TS65DHRC11
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