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| Item number: 2794E-2445817 Manufacturer no.: FD150R12RT4HOSA1 EAN/GTIN: n/a |
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![](/p.gif) | Maximum Continuous Collector Current = 150 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 790 W More information: ![](/p.gif) | ![](/p.gif) | Maximum Continuous Collector Current: | 150 A | Maximum Collector Emitter Voltage: | 1200 V | Maximum Gate Emitter Voltage: | ±20V | Maximum Power Dissipation: | 790 W | Number of Transistors: | 1 |
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![](/p.gif) | Other search terms: power transistor, 2445817, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, FD150R12RT4HOSA1 |
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