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onsemi NXH350N100H4Q2F2S1G IGBT Module, 303 A 1000 V Q2PACK (Pb-Free/Halide-Free) / 2456976


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Product information
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Product Image
Item number:
     2794E-2456976
Manufacturer:
     onsemi
Manufacturer no.:
     NXH350N100H4Q2F2S1G
EAN/GTIN:
     n/a
Search terms:
Transistor
Transistors
Maximum Continuous Collector Current = 303 A
Maximum Collector Emitter Voltage = 1000 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 592 W
Package Type = Q2PACK (Pb-Free/Halide-Free)
More information:
Maximum Continuous Collector Current:
303 A
Maximum Collector Emitter Voltage:
1000 V
Maximum Gate Emitter Voltage:
±20V
Maximum Power Dissipation:
592 W
Number of Transistors:
4
Package Type:
Q2PACK (Pb-Free/Halide-Free)
Other search terms: 2456976, Semiconductors, Discrete Semiconductors, IGBTs, onsemi, NXH350N100H4Q2F2S1G
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from £ 367.043*
  
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