|  |
| |
| Item number:
2794E-2461508 Manufacturer no.:
BSM180D12P2C101 EAN/GTIN:
n/a |
| |
|
| | |
| BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes. SiC Power Modules, ROHM. The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source. Half-Bridge configuration Low Surge Current Low Power Switching Losses High-Speed Switching Low Operating Temperature More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 204 A | Maximum Drain Source Voltage: | 1200 V | Mounting Type: | Screw Mount | Maximum Power Dissipation: | 1360 W | Maximum Operating Temperature: | +150 °C | Minimum Operating Temperature: | -40 °C |
|
| | |
| | | |
| Other search terms: 2461508, Semiconductors, Discrete Semiconductors, MOSFETs, ROHM, BSM180D12P2C101 |
| | |
| |