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| Item number: 2794E-2732956 Manufacturer no.: IGB20N65S5ATMA1 EAN/GTIN: n/a |
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![](/p.gif) | Maximum Continuous Collector Current = 20 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20 V, ±30V Number of Transistors = 1 Package Type = TO-263 Mounting Type = Through Hole Channel Type = N Pin Count = 3 More information: ![](/p.gif) | ![](/p.gif) | Maximum Continuous Collector Current: | 20 A | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | ±20 V, ±30V | Maximum Power Dissipation: | 125 W | Number of Transistors: | 1 | Package Type: | TO-263 | Mounting Type: | Through Hole | Channel Type: | N | Pin Count: | 3 |
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![](/p.gif) | Other search terms: 2732956, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IGB20N65S5ATMA1 |
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