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N-Channel MOSFET, 200 mA, 30 V, 3-Pin SOT-346 Toshiba 2SK2009(F) / 6011983


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Product information
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Item number:
     2794E-6011983
Manufacturer:
     Toshiba
Manufacturer no.:
     2SK2009(F)
EAN/GTIN:
     5059041950145
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
MOSFET N-Channel, 2SK Series, Toshiba
More information:
Channel Type:
N
Maximum Continuous Drain Current:
200 mA
Maximum Drain Source Voltage:
30 V
Package Type:
SOT-346
Series:
2SK
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
2 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
1.5V
Maximum Power Dissipation:
200 mW
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-20 V, +20 V
Length:
2.9mm
Maximum Operating Temperature:
+150 °C
Other search terms: 6011983, Semiconductors, Discrete Semiconductors, MOSFETs, Toshiba, 2SK2009(F)
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