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Dual N-Channel MOSFET, 180 mA, 20 V, 6-Pin US6 Toshiba SSM6N35FU(TE85L,F) / 6954849


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Product information
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Product Image
Item number:
     2794E-6954849
Manufacturer:
     Toshiba
Manufacturer no.:
     SSM6N35FU(TE85L,F)
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Dual MOSFET N-Channel SSM6Nxx, Toshiba
More information:
Channel Type:
N
Maximum Continuous Drain Current:
180 mA
Maximum Drain Source Voltage:
20 V
Package Type:
US6
Series:
SSM6
Mounting Type:
Surface Mount
Pin Count:
6
Maximum Drain Source Resistance:
20 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
1V
Maximum Power Dissipation:
200 mW
Transistor Configuration:
Isolated
Maximum Gate Source Voltage:
-10 V, +10 V
Length:
1.25mm
Maximum Operating Temperature:
+150 °C
Other search terms: 6954849, Semiconductors, Discrete Semiconductors, MOSFETs, Toshiba, SSM6N35FU(TE85L,F)
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