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N-Channel MOSFET, 28 A, 300 V, 3-Pin D2PAK onsemi FDB28N30TM / 7598970

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packet

Product information

Item number:
2794E-7598970

Manufacturer:
onsemi

Manufacturer no.:
FDB28N30TM

EAN/GTIN:
5059042922097

Search terms:

Power transistor
MOSFET
MOSFET transistor
mosfet 300v

UniFET™ N-Channel MOSFET, Fairchild Semiconductor. UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress. UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

More information:


Channel Type:	N
Maximum Continuous Drain Current:	28 A
Maximum Drain Source Voltage:	300 V
Package Type:	D2PAK (TO-263)
Series:	UniFET
Mounting Type:	Surface Mount
Pin Count:	3
Maximum Drain Source Resistance:	129 mΩ
Channel Mode:	Enhancement
Minimum Gate Threshold Voltage:	3V
Maximum Power Dissipation:	250 W
Transistor Configuration:	Single
Maximum Gate Source Voltage:	-30 V, +30 V
Length:	10.67mm
Maximum Operating Temperature:	+150 °C

... > Semiconductors > Discrete Semiconductors > MOSFETs

Other search terms: power transistor, 7598970, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, FDB28N30TM

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