|  |
| |
| Item number:
2794E-7800605 Manufacturer no.:
NTJD1155LT1G EAN/GTIN:
5059042792379 |
| |
|
| | |
| Dual N/P-Channel MOSFET, ON Semiconductor. The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel ‘s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi ‘s trench technology. More information: | | Channel Type: | N, P | Maximum Continuous Drain Current: | 1.3 A | Maximum Drain Source Voltage: | 8 V | Package Type: | SOT-363 | Mounting Type: | Surface Mount | Pin Count: | 6 | Maximum Drain Source Resistance: | 320 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 1V | Maximum Power Dissipation: | 400 mW | Transistor Configuration: | N+P Loadswitch | Maximum Gate Source Voltage: | +8 V | Length: | 2.2mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 2 |
|
| | |
| | | |
| Other search terms: 7800605, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, NTJD1155LT1G |
| | |
| |