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| Item number:
2794E-7800655 Manufacturer no.:
NTLJD3119CTBG EAN/GTIN:
5059042792331 |
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| Dual N/P-Channel MOSFET, ON Semiconductor. The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel ‘s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi ‘s trench technology. More information: | | Channel Type: | N, P | Maximum Continuous Drain Current: | 4.1 A, 4.6 A | Maximum Drain Source Voltage: | 20 V | Package Type: | WDFN | Mounting Type: | Surface Mount | Pin Count: | 6 | Maximum Drain Source Resistance: | 120 mΩ, 200 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 1V | Maximum Power Dissipation: | 2.3 W | Transistor Configuration: | Isolated | Maximum Gate Source Voltage: | -8 V, +8 V | Length: | 2mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 2 |
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| Other search terms: 7800655, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, NTLJD3119CTBG |
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