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| Item number:
2794E-7879409 Manufacturer no.:
SISA10DN-T1-GE3 EAN/GTIN:
5059040676961 |
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| N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 30 A | Maximum Drain Source Voltage: | 30 V | Package Type: | PowerPAK 1212-8 | Series: | TrenchFET | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 5 mΩ | Channel Mode: | Enhancement | Minimum Gate Threshold Voltage: | 1.1V | Maximum Power Dissipation: | 39 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -16 V, +20 V | Length: | 3.4mm | Maximum Operating Temperature: | +150 °C |
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| Other search terms: 7879409, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SISA10DNT1GE3 |
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