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| Item number: 2794E-7965058 Manufacturer no.: GT30J121 EAN/GTIN: 5059041138628 |
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![](/p.gif) | IGBT Discretes, Toshiba More information: ![](/p.gif) | ![](/p.gif) | Maximum Continuous Collector Current: | 30 A | Maximum Collector Emitter Voltage: | 600 V | Maximum Gate Emitter Voltage: | ±20V | Maximum Power Dissipation: | 170 W | Package Type: | TO-3P | Mounting Type: | Through Hole | Channel Type: | N | Pin Count: | 3 | Switching Speed: | 1MHz | Transistor Configuration: | Single | Dimensions: | 15.9 x 4.8 x 20mm | Maximum Operating Temperature: | +150 °C |
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![](/p.gif) | Other search terms: power transistor, 7965058, Semiconductors, Discrete Semiconductors, IGBTs, Toshiba, GT30J121 |
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