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Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole / 7965061


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Product information
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Item number:
     2794E-7965061
Manufacturer:
     Toshiba
Manufacturer no.:
     GT50JR21
EAN/GTIN:
     5059041480581
Search terms:
IGBT
Power transistor
Transistor
Transistors
IGBT Discretes, Toshiba
More information:
Maximum Continuous Collector Current:
50 A
Maximum Collector Emitter Voltage:
600 V
Maximum Gate Emitter Voltage:
±25V
Maximum Power Dissipation:
230 W
Package Type:
TO-3P
Mounting Type:
Through Hole
Channel Type:
N
Pin Count:
3
Switching Speed:
1MHz
Transistor Configuration:
Single
Dimensions:
15.5 x 4.5 x 20mm
Maximum Operating Temperature:
+175 °C
Other search terms: power transistor, 7965061, Semiconductors, Discrete Semiconductors, IGBTs, Toshiba, GT50JR21
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