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| Item number:
2794E-8022143 Manufacturer no.:
RFD12N06RLESM9A EAN/GTIN:
5059042494891 |
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| UltraFET® MOSFET, Fairchild Semiconductor. UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge. Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management. More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 18 A | Maximum Drain Source Voltage: | 60 V | Package Type: | DPAK (TO-252) | Series: | UltraFET | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 75 mΩ | Channel Mode: | Enhancement | Minimum Gate Threshold Voltage: | 1V | Maximum Power Dissipation: | 49 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -16 V, +16 V | Length: | 6.73mm | Maximum Operating Temperature: | +175 °C |
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| Other search terms: 8022143, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, RFD12N06RLESM9A |
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