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onsemi HGT1S10N120BNST IGBT, 80 A 1200 V, 3-Pin D2PAK (TO-263), Surface Mount / 8076660


Quantity:  packet  
Product information
Product Image
Product Image
Item number:
     2794E-8076660
Manufacturer:
     onsemi
Manufacturer no.:
     HGT1S10N120BNST
EAN/GTIN:
     5059042499100
Search terms:
IGBT
Power transistor
SMD transistor
SMD transistors
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
More information:
Maximum Continuous Collector Current:
80 A
Maximum Collector Emitter Voltage:
1200 V
Maximum Gate Emitter Voltage:
±20V
Maximum Power Dissipation:
298 W
Package Type:
D2PAK (TO-263)
Mounting Type:
Surface Mount
Channel Type:
N
Pin Count:
3
Switching Speed:
1MHz
Transistor Configuration:
Single
Dimensions:
10.67 x 11.33 x 4.83mm
Maximum Operating Temperature:
+150 °C
Minimum Operating Temperature:
-55 °C
Other search terms: Transistor, Transistors, smd transistor, 8076660, Semiconductors, Discrete Semiconductors, IGBTs, onsemi, HGT1S10N120BNST
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