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| Item number:
2794E-8123132 Manufacturer no.:
SI2366DS-T1-GE3 EAN/GTIN:
5059040793583 |
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| N-Channel MOSFET, 30V to 50V, Vishay Semiconductor More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 5.8 A | Maximum Drain Source Voltage: | 30 V | Package Type: | SOT-23 | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 42 mΩ | Channel Mode: | Enhancement | Minimum Gate Threshold Voltage: | 1.2V | Maximum Power Dissipation: | 2.1 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 3.04mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 1 |
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| Other search terms: 8123132, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SI2366DST1GE3 |
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