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Dual N/P-Channel-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay SI4599DY-T1-GE3 / 8123233


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Item number:
     2794E-8123233
Manufacturer:
     Vishay
Manufacturer no.:
     SI4599DY-T1-GE3
EAN/GTIN:
     5059040793798
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Dual N/P-Channel MOSFET, Vishay Semiconductor
More information:
Channel Type:
N, P
Maximum Continuous Drain Current:
4.7 A, 6.8 A
Maximum Drain Source Voltage:
40 V
Package Type:
SOIC
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
42.5 mΩ, 62 mΩ
Channel Mode:
Enhancement
Minimum Gate Threshold Voltage:
1.2V
Maximum Power Dissipation:
3 W, 3.1 W
Transistor Configuration:
Isolated
Maximum Gate Source Voltage:
-20 V, +20 V
Length:
5mm
Maximum Operating Temperature:
+150 °C
Number of Elements per Chip:
2
Other search terms: 8123233, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SI4599DYT1GE3
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