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Dual N/P-Channel-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 Vishay SIA517DJ-T1-GE3 / 8141225


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Product information
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Product Image
Item number:
     2794E-8141225
Manufacturer:
     Vishay
Manufacturer no.:
     SIA517DJ-T1-GE3
EAN/GTIN:
     5059040747128
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Dual N/P-Channel MOSFET, Vishay Semiconductor
More information:
Channel Type:
N, P
Maximum Continuous Drain Current:
4.3 A, 4.5 A
Maximum Drain Source Voltage:
12 V
Package Type:
SOT-363
Mounting Type:
Surface Mount
Pin Count:
6
Maximum Drain Source Resistance:
65 mΩ, 170 mΩ
Channel Mode:
Enhancement
Minimum Gate Threshold Voltage:
0.4V
Maximum Power Dissipation:
6.5 W
Transistor Configuration:
Isolated
Maximum Gate Source Voltage:
-8 V, +8 V
Length:
2.15mm
Maximum Operating Temperature:
+150 °C
Number of Elements per Chip:
2
Other search terms: 8141225, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SIA517DJT1GE3
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