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| Item number: 2794E-8141225 Manufacturer no.: SIA517DJ-T1-GE3 EAN/GTIN: 5059040747128 |
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![](/p.gif) | Dual N/P-Channel MOSFET, Vishay Semiconductor More information: ![](/p.gif) | ![](/p.gif) | Channel Type: | N, P | Maximum Continuous Drain Current: | 4.3 A, 4.5 A | Maximum Drain Source Voltage: | 12 V | Package Type: | SOT-363 | Mounting Type: | Surface Mount | Pin Count: | 6 | Maximum Drain Source Resistance: | 65 mΩ, 170 mΩ | Channel Mode: | Enhancement | Minimum Gate Threshold Voltage: | 0.4V | Maximum Power Dissipation: | 6.5 W | Transistor Configuration: | Isolated | Maximum Gate Source Voltage: | -8 V, +8 V | Length: | 2.15mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 2 |
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![](/p.gif) | Other search terms: 8141225, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SIA517DJT1GE3 |
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