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| Item number: 2794E-8141323 Manufacturer no.: SISS27DN-T1-GE3 EAN/GTIN: 5059040742604 |
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![](/p.gif) | P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor More information: ![](/p.gif) | ![](/p.gif) | Channel Type: | P | Maximum Continuous Drain Current: | 23 A | Maximum Drain Source Voltage: | 30 V | Package Type: | PowerPAK 1212-8 | Series: | TrenchFET | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 9 mΩ | Channel Mode: | Enhancement | Minimum Gate Threshold Voltage: | 1V | Maximum Power Dissipation: | 57 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 3.3mm | Maximum Operating Temperature: | +150 °C |
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![](/p.gif) | Other search terms: 8141323, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SISS27DNT1GE3 |
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