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N-Channel MOSFET, 3.6 A, 600 V, 3-Pin D2PAK Vishay SIHFBC30AS-GE3 / 8152698


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Product information
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Item number:
     2794E-8152698
Manufacturer:
     Vishay
Manufacturer no.:
     SIHFBC30AS-GE3
EAN/GTIN:
     5059040764897
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
More information:
Channel Type:
N
Maximum Continuous Drain Current:
3.6 A
Maximum Drain Source Voltage:
600 V
Package Type:
D2PAK (TO-263)
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
2.2 Ω
Channel Mode:
Enhancement
Minimum Gate Threshold Voltage:
2V
Maximum Power Dissipation:
74 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-30 V, +30 V
Length:
10.67mm
Maximum Operating Temperature:
+150 °C
Number of Elements per Chip:
1
Other search terms: 8152698, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SIHFBC30ASGE3
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1 packet contains 10 pieces (from £ 0.984* per piece)
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