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| Item number:
2794E-8193936 Manufacturer no.:
SQD19P06-60L_GE3 EAN/GTIN:
5059040640276 |
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| P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor More information: | | Channel Type: | P | Maximum Continuous Drain Current: | 11 A | Maximum Drain Source Voltage: | 60 V | Package Type: | DPAK (TO-252) | Series: | SQ Rugged | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 125 mΩ | Channel Mode: | Enhancement | Minimum Gate Threshold Voltage: | 1.5V | Maximum Power Dissipation: | 46 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 6.73mm | Maximum Operating Temperature: | +175 °C |
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| Other search terms: 8193936, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SQD19P0660L_GE3 |
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