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Dual N/P-Channel-Channel MOSFET, 2.1 A, 3.4 A, 30 V, 6-Pin TSOT-26 Diodes Inc DMG6602SVT-7 / 8222532


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Item number:
     2794E-8222532
Manufacturer:
     Diodes
Manufacturer no.:
     DMG6602SVT-7
EAN/GTIN:
     5059043376110
Search terms:
Diodes
Power transistor
MOSFET
MOSFET transistor
Dual N/P-Channel MOSFET, Diodes Inc.
More information:
Channel Type:
N, P
Maximum Continuous Drain Current:
2.1 A, 3.4 A
Maximum Drain Source Voltage:
30 V
Package Type:
TSOT-26
Mounting Type:
Surface Mount
Pin Count:
6
Maximum Drain Source Resistance:
100 mΩ, 140 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
3V
Maximum Power Dissipation:
1.27 W
Transistor Configuration:
Isolated
Maximum Gate Source Voltage:
-20 V, +20 V
Length:
2.9mm
Maximum Operating Temperature:
+150 °C
Number of Elements per Chip:
2
Other search terms: power transistor, 8222532, Semiconductors, Discrete Semiconductors, MOSFETs, DiodesZetex, DMG6602SVT7
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