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Item
Infineon IKW15N120H3FKSA1 IGBT, 30 A 1200 V, 3-Pin TO-247, Through Hole / 8268223
Quantity:
packet
Product information
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Item number:
2794E-8268223
Manufacturer:
Infineon
Manufacturer no.:
IKW15N120H3
EAN/GTIN:
5059043159829
Search terms:
Fast recovery diode
Fast recovery diodes
IGBT
Power transistor
Infineon TrenchStop IGBT Transistors, 1100 to 1600V. A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. Collector-emitter voltage range 1100 to 1600V Very low VCEsat Low turn-off losses Short tail current Low EMI Maximum junction temperature 175°C
More information:
Maximum Continuous Collector Current:
30 A
Maximum Collector Emitter Voltage:
1200 V
Maximum Gate Emitter Voltage:
±20V
Maximum Power Dissipation:
217 W
Package Type:
TO-247
Mounting Type:
Through Hole
Channel Type:
N
Pin Count:
3
Transistor Configuration:
Single
Dimensions:
16.03 x 5.16 x 21.1mm
Maximum Operating Temperature:
+175 °C
Minimum Operating Temperature:
-40 °C
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IKW15N120H3
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