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| Item number:
2794E-8268829 Manufacturer no.:
IRF7105TRPBF EAN/GTIN:
5059043207995 |
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| Dual N/P-Channel Power MOSFET, Infineon. Infineon ‘s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration. More information: | | Channel Type: | N, P | Maximum Continuous Drain Current: | 2.3 A, 3.5 A | Maximum Drain Source Voltage: | 25 V | Package Type: | SOIC | Series: | HEXFET | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 160 mΩ, 400 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 3V | Minimum Gate Threshold Voltage: | 1V | Maximum Power Dissipation: | 2 W | Transistor Configuration: | Isolated | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 5mm |
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| Other search terms: power mosfet, 8268829, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IRF7105TRPBF |
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