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| Item number: 2794E-8268866 Manufacturer no.: IRF7309TRPBF EAN/GTIN: 5059043204239 |
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![](/p.gif) | Dual N/P-Channel Power MOSFET, Infineon. Infineon ‘s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration. More information: ![](/p.gif) | ![](/p.gif) | Channel Type: | N, P | Maximum Continuous Drain Current: | 3 A, 4 A | Maximum Drain Source Voltage: | 30 V | Package Type: | SOIC | Series: | HEXFET | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 80 mΩ, 160 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 1V | Minimum Gate Threshold Voltage: | 1V | Maximum Power Dissipation: | 1.4 W | Transistor Configuration: | Isolated | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 5mm |
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![](/p.gif) | Other search terms: power mosfet, 8268866, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IRF7309TRPBF |
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