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Dual N/P-Channel-Channel MOSFET, 3 A, 4 A, 30 V, 8-Pin SOIC Infineon IRF7309TRPBF / 8268866


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Item number:
     2794E-8268866
Manufacturer:
     Infineon
Manufacturer no.:
     IRF7309TRPBF
EAN/GTIN:
     5059043204239
Search terms:
Power MOSFET
Power transistor
MOSFET
MOSFET transistor
Dual N/P-Channel Power MOSFET, Infineon. Infineon ‘s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
More information:
Channel Type:
N, P
Maximum Continuous Drain Current:
3 A, 4 A
Maximum Drain Source Voltage:
30 V
Package Type:
SOIC
Series:
HEXFET
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
80 mΩ, 160 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
1V
Minimum Gate Threshold Voltage:
1V
Maximum Power Dissipation:
1.4 W
Transistor Configuration:
Isolated
Maximum Gate Source Voltage:
-20 V, +20 V
Length:
5mm
Other search terms: power mosfet, 8268866, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IRF7309TRPBF
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