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onsemi FGA60N65SMD IGBT, 120 A 650 V, 3-Pin TO-3PN, Through Hole / 8648795


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Product information
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Product Image
Item number:
     2794E-8648795
Manufacturer:
     onsemi
Manufacturer no.:
     FGA60N65SMD
EAN/GTIN:
     5059042658682
Search terms:
IGBT
Power transistor
Transistor
Transistors
Discrete IGBTs, Fairchild Semiconductor
More information:
Maximum Continuous Collector Current:
120 A
Maximum Collector Emitter Voltage:
650 V
Maximum Gate Emitter Voltage:
±20V
Maximum Power Dissipation:
600 W
Package Type:
TO-3PN
Mounting Type:
Through Hole
Channel Type:
N
Pin Count:
3
Transistor Configuration:
Single
Dimensions:
15.8 x 5 x 20.1mm
Maximum Operating Temperature:
+175 °C
Minimum Operating Temperature:
-55 °C
Other search terms: power transistor, 8648795, Semiconductors, Discrete Semiconductors, IGBTs, onsemi, FGA60N65SMD
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