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Toshiba GT40QR21,F(O IGBT, 40 A 1200 V, 3-Pin TO-3P, Through Hole / 8912743


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Item number:
     2794E-8912743
Manufacturer:
     Toshiba
Manufacturer no.:
     GT40QR21,F(O
EAN/GTIN:
     5059041634779
Search terms:
IGBT
Power transistor
Transistor
Transistors
IGBT Discretes, Toshiba
More information:
Maximum Continuous Collector Current:
40 A
Maximum Collector Emitter Voltage:
1200 V
Maximum Gate Emitter Voltage:
±25V
Maximum Power Dissipation:
230 W
Package Type:
TO-3P
Mounting Type:
Through Hole
Channel Type:
N
Pin Count:
3
Switching Speed:
2.5MHz
Transistor Configuration:
Single
Dimensions:
15.5 x 4.5 x 20mm
Energy Rating:
0.29mJ
Gate Capacitance:
1500pF
Maximum Operating Temperature:
175 °C
Other search terms: power transistor, 8912743, Semiconductors, Discrete Semiconductors, IGBTs, Toshiba, GT40QR21,F(O
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