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| Item number:
2794E-9110890 Manufacturer no.:
IPB027N10N3GATMA1 EAN/GTIN:
5059043342313 |
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| Infineon OptiMOS™3 Power MOSFETs, 100V and over More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 120 A | Maximum Drain Source Voltage: | 100 V | Package Type: | D2PAK (TO-263) | Series: | OptiMOS™ 3 | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 4.5 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 3.5V | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 300 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 10.31mm |
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| Other search terms: 9110890, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPB027N10N3GATMA1 |
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