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| Item number:
2794E-9134032 Manufacturer no.:
IRLB3813PBF EAN/GTIN:
5059043425009 |
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| N-Channel Power MOSFET 30V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 260 A | Maximum Drain Source Voltage: | 30 V | Package Type: | TO-220AB | Series: | HEXFET | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 2 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.35V | Minimum Gate Threshold Voltage: | 1.35V | Maximum Power Dissipation: | 230 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 10.67mm |
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| Other search terms: power mosfet, 9134032, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IRLB3813PBF |
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