|  |
| |
| Item number:
2794E-9194189 Manufacturer no.:
SI9945BDY-T1-GE3 EAN/GTIN:
5059040648685 |
| |
|
| | |
| Dual N-Channel MOSFET, Vishay Semiconductor More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 5.3 A | Maximum Drain Source Voltage: | 60 V | Package Type: | SOIC | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 72 mΩ | Channel Mode: | Enhancement | Minimum Gate Threshold Voltage: | 1V | Maximum Power Dissipation: | 3.1 W | Transistor Configuration: | Isolated | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 5mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 2 |
|
| | |
| | | |
| Other search terms: 9194189, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SI9945BDYT1GE3 |
| | |
| |