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P-Channel MOSFET, 31 A, 55 V, 3-Pin IPAK Infineon IRFU5305PBF / 9195021


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Item number:
     2794E-9195021
Manufacturer:
     Infineon
Manufacturer no.:
     IRFU5305PBF
EAN/GTIN:
     5059043009025
Search terms:
Power MOSFET
Power transistor
MOSFET
MOSFET transistor
P-Channel Power MOSFET 40V to 55V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
More information:
Channel Type:
P
Maximum Continuous Drain Current:
31 A
Maximum Drain Source Voltage:
55 V
Package Type:
IPAK (TO-251)
Series:
HEXFET
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
65 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Minimum Gate Threshold Voltage:
2V
Maximum Power Dissipation:
110 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-20 V, +20 V
Length:
6.6mm
Other search terms: power mosfet, 9195021, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IRFU5305PBF
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