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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W


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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Item number:
     5070-B1M080120HC
Manufacturer:
     BASiC SEMICONDUCTOR
Manufacturer no.:
     B1M080120HC
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Manufacturer: BASiC SEMICONDUCTOR
Mounting: THT
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 27A
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
Power dissipation: 241W
Polarisation: unipolar
Kind of package: tube
Gate charge: 149nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 80A
Other search terms: Transistors, power transistor
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