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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 10A; Idm: 40A; 80.6W


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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 10A; Idm: 40A; 80.6W
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 10A; Idm: 40A; 80.6W
Item number:
     5070-BXW10M1K2H
Manufacturer:
     Bridgelux
Manufacturer no.:
     BXW10M1K2H
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Manufacturer: BRIDGELUX
Mounting: THT
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 10A
On-state resistance: 610mΩ
Type of transistor: N-MOSFET
Power dissipation: 80.6W
Polarisation: unipolar
Kind of package: tube
Gate charge: 29nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -3...20V
Pulsed drain current: 40A
Other search terms: Transistors, power transistor
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