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Transistor: N-MOSFET x2; unipolar; 30V; 0.9A; Idm: 9.6A; 0.32W


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Product information
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Item number:
     5070-DMN3190LDW-7
Manufacturer:
     Diodes
Manufacturer no.:
     DMN3190LDW-7
EAN/GTIN:
     n/a
Search terms:
Diodes
Power transistor
MOSFET
MOSFET transistor
Manufacturer: DIODES INCORPORATED
Mounting: SMD
Case: SOT363
Drain-source voltage: 30V
Drain current: 0.9A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.32W
Polarisation: unipolar
Kind of package: tape;reel
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 9.6A
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