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Transistor: N-MOSFET x2; Trench; unipolar; 250V; 30A; Idm: 130A


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Transistor: N-MOSFET x2; Trench; unipolar; 250V; 30A; Idm: 130A
Transistor: N-MOSFET x2; Trench; unipolar; 250V; 30A; Idm: 130A
Item number:
     5070-FMM50-025TF
Manufacturer:
     IXYS
Manufacturer no.:
     FMM50-025TF
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Manufacturer: IXYS
Mounting: THT
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: double series
Reverse recovery time: 84ns
Drain-source voltage: 250V
Drain current: 30A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Gate charge: 78nC
Technology: HiPerFET™;Trench
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 130A
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