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Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 30A


Quantity:  piece  
Product information

Item number:
     5070-GD30PJX65L2S
Manufacturer:
     STARPOWER SEMICONDUCTOR
Manufacturer no.:
     GD30PJX65L2S
EAN/GTIN:
     n/a
Search terms:
Diode module
IGBT modules
Transistor
Transistors
Manufacturer: STARPOWER SEMICONDUCTOR
Case: L2.2
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: three-phase diode bridge;NTC thermistor;boost chopper;IGBT three-phase bridge OE output
Other search terms: diode module
An overview of the conditions1
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Price
from £ 19.78*
  
Price is valid from 3,000 pieces
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Unit
1 piece
£ 34.93*
£ 41.92
per piece
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£ 33.41*
£ 40.09
per piece
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£ 27.57*
£ 33.08
per piece
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£ 26.84*
£ 32.21
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£ 26.40*
£ 31.68
per piece
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£ 23.74*
£ 28.49
per piece
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£ 23.10*
£ 27.72
per piece
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£ 22.70*
£ 27.24
per piece
from 3000 pieces
£ 19.78*
£ 23.74
per piece
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