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Transistor: IGBT; 1.2kV; 35A; 230W; TO3PN


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Transistor: IGBT; 1.2kV; 35A; 230W; TO3PN
Transistor: IGBT; 1.2kV; 35A; 230W; TO3PN
Item number:
     5070-GT40QR21
Manufacturer:
     Toshiba
Manufacturer no.:
     GT40QR21(STA1,E,D
EAN/GTIN:
     n/a
Search terms:
IGBT
Power transistor
Transistor
Transistors
Manufacturer: TOSHIBA
Mounting: THT
Case: TO3PN
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±25V
Collector current: 35A
Pulsed collector current: 80A
Turn-on time: 0.3µs
Turn-off time: 0.6µs
Type of transistor: IGBT
Power dissipation: 230W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Other search terms: power transistor
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