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Transistor: IGBT; 600V; 44A; 115W; TO3PN


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Transistor: IGBT; 600V; 44A; 115W; TO3PN
Transistor: IGBT; 600V; 44A; 115W; TO3PN
Item number:
     5070-GT50JR22
Manufacturer:
     Toshiba
Manufacturer no.:
     GT50JR22(STA1,E,S)
EAN/GTIN:
     n/a
Search terms:
IGBT
Power transistor
Transistor
Transistors
Manufacturer: TOSHIBA
Mounting: THT
Case: TO3PN
Collector-emitter voltage: 600V
Gate-emitter voltage: ±25V
Collector current: 44A
Pulsed collector current: 100A
Turn-on time: 250ns
Turn-off time: 330ns
Type of transistor: IGBT
Power dissipation: 115W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Other search terms: power transistor
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from £ 2.34*
  
Price is valid from 7,500 pieces
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