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Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 211A; 326W


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Product information

Item number:
     5070-LGE3M28065Q
Manufacturer:
     LUGUANG ELECTRONIC
Manufacturer no.:
     LGE3M28065Q
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Manufacturer: LUGUANG ELECTRONIC
Mounting: THT
Case: TO247-4
Drain-source voltage: 650V
Drain current: 67A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 326W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 163nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 211A
Other search terms: Transistors, power transistor
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