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Transistor: N-MOSFET; SiC; unipolar; 650V; 54A; Idm: 170A; 300W


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Product information

Item number:
     5070-LGE3M30065Q
Manufacturer:
     LUGUANG ELECTRONIC
Manufacturer no.:
     LGE3M30065Q
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Manufacturer: LUGUANG ELECTRONIC
Mounting: THT
Case: TO247-4
Drain-source voltage: 650V
Drain current: 54A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 170A
Other search terms: Transistors, power transistor
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