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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 145A; 327W


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Product information

Item number:
     5070-LGE3M50120B
Manufacturer:
     LUGUANG ELECTRONIC
Manufacturer no.:
     LGE3M50120B
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Polarisation: unipolar
Type of transistor: N-MOSFET
Pulsed drain current: 145A
Drain current: 43A
On-state resistance: 80mΩ
Manufacturer: LUGUANG ELECTRONIC
Drain-source voltage: 1.2kV
Technology: SiC
Power dissipation: 327W
Case: TO247-3
Kind of channel: enhanced
Kind of package: tube
Mounting: THT
Gate-source voltage: -5...20V
Gate charge: 0.12µC
Other search terms: Transistors
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