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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 70A; 300W


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Product information

Item number:
     5070-LGE3M80120Q
Manufacturer:
     LUGUANG ELECTRONIC
Manufacturer no.:
     LGE3M80120Q
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Kind of channel: enhanced
Power dissipation: 300W
Mounting: THT
Pulsed drain current: 70A
Kind of package: tube
Gate charge: 76nC
On-state resistance: 0.13Ω
Manufacturer: LUGUANG ELECTRONIC
Technology: SiC
Drain current: 31A
Gate-source voltage: -5...20V
Drain-source voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Polarisation: unipolar
Case: TO247-4
Type of transistor: N-MOSFET
Other search terms: Transistors
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