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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 90A; 200W


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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 90A; 200W
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 90A; 200W
Item number:
     5070-MSC080SMA120B4
Manufacturer:
     MICROCHIP (MICROSEMI)
Manufacturer no.:
     MSC080SMA120B4
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Manufacturer: MICROCHIP (MICROSEMI)
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 26A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 64nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 90A
Other search terms: Transistors, power transistor
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