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Transistor: P-MOSFET; Trench; unipolar; -20V; -1.3A; Idm: -8.4A


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Transistor: P-MOSFET; Trench; unipolar; -20V; -1.3A; Idm: -8.4A
Transistor: P-MOSFET; Trench; unipolar; -20V; -1.3A; Idm: -8.4A
Item number:
     5070-NXV65UPR
Manufacturer:
     Nexperia
Manufacturer no.:
     NXV65UPR
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Manufacturer: NEXPERIA
Mounting: SMD
Case: SOT23;TO236AB
Drain-source voltage: -20V
Drain current: -1.3A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 0.34W
Polarisation: unipolar
Kind of package: tape;reel
Unit price: No
Gate charge: 5.8nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -8.4A
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5060
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5070 West Midlands B46
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Stock level: 5070 West Midlands B46
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