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Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A


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Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A
Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A
Item number:
     5070-P0R5B60HP2-5071
Manufacturer:
     SHINDENGEN
Manufacturer no.:
     P0R5B60HP2-5071
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: SHINDENGEN
Mounting: SMD
Case: FB (TO252AA)
Drain-source voltage: 600V
Drain current: 0.5A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 4.3nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 2A
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