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Transistor: N-MOSFET; Trench; unipolar; 100V; 60A; Idm: 339A; 238W


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Product information

Item number:
     5070-PSMN012-100YLX
Manufacturer:
     Nexperia
Manufacturer no.:
     PSMN012-100YLX
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: NEXPERIA
Mounting: SMD
Case: SOT669;PowerSO8;LFPAK56
Drain-source voltage: 100V
Drain current: 60A
On-state resistance: 33.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 238W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 118nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 339A
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